.MODEL NMOS NMOS LEVEL = 53 +VERSION = 3.2 TNOM = 27 TOX = 7.4E-9 +XJ = 2.3E-7 NCH = 2E17 VTH0 = 0.5910286 +K1 = 0.5665015 K2 = -2.01788E-5 K3 = 43.254121 +K3B = -8.3666578 W0 = 5.7493E-6 NLX = 1.72968E-7 +DVT0W = 0.018702 DVT1W = 5.3E6 DVT2W = -0.032 +DVT0 = 3.6629308 DVT1 = 0.5219583 DVT2 = -0.05 +VBM = -3.3 U0 = 528.8985 UA = 1.476303E-9 +UB = 2.083775E-19 UC = 5.368193E-11 VSAT = 9.011E4 +A0 = 0.8775883 AGS = 0.214565 B0 = 4.40815E-8 +B1 = 1E-7 KETA = 0.0166414 A1 = 0 +A2 = 1 RDSW = 816.0400837 PRWG = 9.336953E-4 +PRWB = 0.0539535 WR = 1 WINT = 4.572104E-8 +LINT = 3.15E-8 XL = 0 XW = 0 +DWG = -2.687564E-9 DWB = 4.696235E-9 VOFF = -0.1406745 +NFACTOR = 1.4442501 CIT = 0 CDSC = 1E-3 +CDSCD = 0 CDSCB = 0 ETA0 = 0 +ETAB = -0.0722136 DSUB = 0.56 PCLM = 0.8351951 +PDIBLC1 = 0.2896433 PDIBLC2 = 2.920887E-3 PDIBLCB = 0 +DROUT = 0.7796106 PSCBE1 = 6.510097E8 PSCBE2 = 2.948305E-5 +PVAG = 0.0587596 DELTA = 1.618913E-3 ALPHA0 = 2.2E-7 +BETA0 = 18.45 ALPHA1 = 0.78 RSH = 2.7 +JS = 1.6E-7 JSW = 4.0E-13 +MOBMOD = 1 PRT = 0 UTE = -1.7395947 +KT1 = -0.1635661 KT1L = -1.173597E-8 KT2 = 0.022 +UA1 = 1.081907E-10 UB1 = -8.22235E-19 UC1 = -1E-10 +AT = 3.3E4 NQSMOD = 0 ELM = 5 +WL = 9.246632E-22 WLN = 1 WW = 0 +WWN = 1 WWL = -1.28698E-20 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 AF = 1 KF = 3.9167E-28 +NOIMOD = 1 EF = 1 CAPMOD = 3 +XPART = 0 CGDO = 1.04294E-10 CGSO = 1.04294E-10 +CJ = 8.86E-4 PB = 0.904 MJ = 0.369 +CJSW = 2.65E-10 PBSW = 0.894 MJSW = 0.356 +CJSWG = 2.84E-10 PBSWG = 0.896 MJSWG = 0.356 +CKAPPA = 0.6 CLC = 1E-8 CLE = 0.6 +NOFF = 1 ACDE = 1 +MOIN = 15 TPB = 0 TPBSW = 0 +TPBSWG = 0 TCJ = 0 TCJSW = 0 +TCJSWG = 0 * definition of selectors for ELDO *for junction leakage +DIOLEV=7 TLEVI=3 XTI=3 N=1.09 * junction capacitance, AD AP, AS and PS calculation +ALEV=3 DCAPLEV=0 +HDIF=0.4875E-6 * external seris resistance +RLEV=4
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