v 20070216 1
C 65400 52000 1 0 0 BJT_Model.sym
{
T 66300 52500 5 10 1 1 0 0 1
refdes=Q2
T 65400 52000 5 10 0 1 0 0 1
model-name=BJTM1_Q2
T 66200 52000 5 10 1 1 0 0 1
file=model/BJTM1_Q2.mod
T 66300 52700 5 10 0 0 0 0 1
device=NPN_TRANSISTOR
}
C 63400 53800 1 0 0 diode-1.sym
{
T 63700 54300 5 10 1 1 0 0 1
refdes=D1
T 63400 53800 5 10 0 1 0 0 1
model-name=DIODEM1_Q2
T 62500 53600 5 10 1 1 0 0 1
file=model/DiodeM1_Q2.mod
T 63800 54400 5 10 0 0 0 0 1
device=DIODE
}
C 64300 52000 1 270 0 diode-1.sym
{
T 64700 51800 5 10 1 1 0 0 1
refdes=D2
T 64300 52000 5 10 0 1 0 0 1
model-name=DIODEM2_Q2
T 63600 51000 5 10 1 1 0 0 1
file=model/DiodeM2_Q2.mod
T 64700 52600 5 10 0 0 0 0 1
device=DIODE
}
C 63400 55100 1 0 0 capacitor-1.sym
{
T 63600 55600 5 10 1 1 0 0 1
refdes=Ccox
T 63400 54900 5 10 1 1 0 0 1
value=6.598e-14F
T 63600 55800 5 10 0 0 0 0 1
device=CAPACITOR
T 63600 56000 5 10 0 0 0 0 1
symversion=0.1
}
C 63200 50600 1 90 0 capacitor-1.sym
{
T 62800 51400 5 10 1 1 180 0 1
refdes=Ceox
T 61900 50600 5 10 1 1 0 0 1
value=2.417e-14F
T 63400 51300 5 10 0 0 0 0 1
device=CAPACITOR
T 63400 51500 5 10 0 0 0 0 1
symversion=0.1
}
C 61700 52400 1 0 0 resistor-1.sym
{
T 61600 52700 5 10 1 1 0 0 1
refdes=Rbx
T 62200 52700 5 10 1 1 0 0 1
value=0.463
T 61500 52200 5 10 1 1 0 0 1
model=TC1=0.14e-2
T 62000 52800 5 10 0 0 0 0 1
device=RESISTOR
}
C 66100 55900 1 90 0 resistor-1.sym
{
T 66500 56700 5 10 1 1 180 0 1
refdes=Rcx
T 66300 56200 5 10 1 1 0 0 1
value=1.716
T 66200 55900 5 10 1 1 0 0 1
model=TC1=0.113e-2
T 66400 56300 5 10 0 0 0 0 1
device=RESISTOR
}
C 66100 49800 1 90 0 resistor-1.sym
{
T 66400 50600 5 10 1 1 180 0 1
refdes=Re
T 66100 49800 5 10 1 1 0 0 1
value=0.443
T 66400 50200 5 10 0 0 0 0 1
device=RESISTOR
}
N 64500 52500 64500 52000 4
N 63000 52500 63000 51500 4
N 66000 52000 66000 50700 4
N 64500 51100 64500 50900 4
N 64500 50900 66000 50900 4
N 63000 50600 63000 49500 4
N 63000 49500 66000 49500 4
N 66000 49000 66000 49800 4
N 62600 52500 65400 52500 4
N 60300 52500 61700 52500 4
N 61300 54000 63400 54000 4
N 66000 55900 66000 53000 4
N 64300 54000 66000 54000 4
N 64300 55300 66000 55300 4
N 63400 55300 61300 55300 4
N 61300 52500 61300 55300 4
N 66000 56800 66000 57400 4
C 66300 57200 1 90 0 spice-subcircuit-IO-1.sym
{
T 66050 58050 5 10 1 1 90 0 1
refdes=P3
T 67200 57600 5 10 0 1 0 0 1
device=spice-IO
}
C 60500 52800 1 180 0 spice-subcircuit-IO-1.sym
{
T 59650 52550 5 10 1 1 180 0 1
refdes=P2
T 61400 53200 5 10 0 1 0 0 1
device=spice-IO
}
C 65700 49200 1 270 0 spice-subcircuit-IO-1.sym
{
T 65950 48350 5 10 1 1 270 0 1
refdes=P1
T 66600 49600 5 10 0 1 0 0 1
device=spice-IO
}
C 68100 55300 1 0 0 spice-subcircuit-LL-1.sym
{
T 68200 55700 5 10 1 1 0 0 1
refdes=A1
T 68200 55400 5 10 1 1 0 0 1
model-name=Q2_MSA26F
T 68200 55600 5 10 0 1 0 0 1
device=spice-subcircuit-LL
}
C 58500 47800 0 0 0 title-B.sym
T 68700 48700 9 20 1 0 0 0 1
Spice .SUBCKT for Q2_MSA26F
T 72500 48100 9 10 1 0 0 0 1
SDB -- 3.31.2003
T 67900 50800 9 10 1 0 0 0 1
This is part of the model for the MSA-2643
T 67900 50500 9 10 1 0 0 0 1
-- a silicon bipolar amp from Agilent.
T 67900 50200 9 10 1 0 0 0 1
The model is detailed in Agilent's app note 5980-2396E